Power Electronics Objective Questions – Set 3

The latching current of SCR is 20 mA. Its holding current will be

Thermal voltage V_T can be given by

Which of the following is disadvantage of fast recovery diodes?

Dynamic equalising circuit is useful

If the anode current is 800 A, then the amount of current required to turn off the GTO is about

The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will

Thyristor is nothing but a

A power semiconductor may undergo damage due to

The capacitance of reversed biased junction J₂ in a thyristor is C_J2 = 20 pF and can be assumed to be independent of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt?

BCT is used for

Which one is most suitable power device for high frequency (>100 KHz) switching application?

Practical way of obtaining static voltage equalization in series connected SCRs is by the use of

Power transistor are type of

Which semiconductor device acts like a diode and two transistor?

Which of following devices has highest di/dt and dv/dt capability?

COOLMOS device can be used in application up to power range of

SITH is also known as

Which following is a two terminal three layer device?

If holding current of a thyristor is 2 mA then latching current should be

A GTO can be turned on by applying

Which of the following is true?

Anode current in an SCR consists of

Which of following is not a power transistor?

A power MOSFET has three terminals called

Compared to transistor, ______________ have lower on state conduction losses and higher power handling capability

A single phase full bridge inverter can operated in load commutation mode in case load consist of

Which of following is normally ON device

A modern power semiconductor device that combines the characteristic of BJT and MOSFET is

IGBT combines the advantages of

A thyristor can termed as