Power Electronics Objective Questions – Set 3

Which one is most suitable power device for high frequency (>100 KHz) switching application?

Which of following is not a power transistor?

Compared to transistor, ______________ have lower on state conduction losses and higher power handling capability

SITH is also known as

If holding current of a thyristor is 2 mA then latching current should be

Which semiconductor device acts like a diode and two transistor?

Power transistor are type of

The capacitance of reversed biased junction J₂ in a thyristor is C_J2 = 20 pF and can be assumed to be independent of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt?

Which following is a two terminal three layer device?

A single phase full bridge inverter can operated in load commutation mode in case load consist of

Which of the following is true?

BCT is used for

COOLMOS device can be used in application up to power range of

Anode current in an SCR consists of

Thermal voltage V_T can be given by

IGBT combines the advantages of

Which of the following is disadvantage of fast recovery diodes?

Practical way of obtaining static voltage equalization in series connected SCRs is by the use of

The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will

Which of following is normally ON device

Which of following devices has highest di/dt and dv/dt capability?

Thyristor is nothing but a

The latching current of SCR is 20 mA. Its holding current will be

A GTO can be turned on by applying

If the anode current is 800 A, then the amount of current required to turn off the GTO is about

A power MOSFET has three terminals called

A thyristor can termed as

A power semiconductor may undergo damage due to

A modern power semiconductor device that combines the characteristic of BJT and MOSFET is

Dynamic equalising circuit is useful