Electronic Devices & Circuits Quiz – Set 9

Which of the following has highest conductivity?

A full wave bridge rectifier is supplied voltage at 50 Hz. The lowest ripple frequency will be

Which of the following is used for generating time varying wave forms?

Electric breakdown strength of a material depends on its

The turn off time of a bipolar transistor is about

The forbidden energy gap for germanium is

Consider the following statements.
The functions of an oxide layer in an IC device is to

1. mask against diffusion or ion implant
2. insulate the surface electrically
3. increase the melting point of silicon
4. produce a chemically stable protective layer of these statements.

Introducing a resistor in the emitter of a common amplifier stabilizes the d.c. operating point against variations in

Dielectric loss due to polarisation occurs in

In a bipolar transistor, emitter efficiency is about

The mean life time of the minority carriers is in the range of a few

In a bipolar junction transistor the base region is made very thin so that

In a JFET

Assertion (A): A BJT can be used as a switch.
Reason (R): In forward active mode emitter base junction is forward biased and base collector junction is reverse biased.

In a centre tap full wave rectifier, 50 V is the peak voltage between the centre tap and one of the ends of the secondary. The maximum voltage across the reverse biased diode will be

Measurement of Hall coefficient enables the determination of

Thermosetting polymers are

In intrinsic semiconductor the increase in conductivity per degree increase in temperature is about

The minimum charge carried by an ion is

The reverse breakdown voltage of a diode depends on the extent of doping.

In n type semiconductor, the free electron concentration

Compared to bipolar junction transistor, a JFET has

Which of these has a layer of intrinsic semiconductor?

The potential of suppressor grid (with respect to cathode) is usually

Consider the following statement associated with bipolar junction transistor and JFET

1. The former has higher input impedance than the later
2. The former has higher frequency stability than the later
3. The later has lower noise figure than the former
4. The later has higher power rating than the former.

Of these statements

The atomic weight of an atom is determined by

A long specimen of P type semiconductor material

If the atomic number of germanium is 32, the number of electrons in the outer most shell will be

E for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that

If the energy gap of a semiconductor is 1.1 eV, then it would be

When p-n junction is reverse biased the holes in p material move towards the junction and electrons in n material move away from the junction.

The work function of a photo surface whose threshold wave length is 1200 A, will be

Which of the following semi-conductor has forbidden energy gap less 1 eV?

An air gap provided in the iron core of an inductor prevents

The ripple factor for a bridge rectifier is

The concentration of minority carriers in an extrinsic semiconductor under equilibrium is

Hystresis loss least depends on

Which of these is used in seven segment display?

Photoelectric effect occurs only in semiconductors and not in metals.

A metal loses electrons at room temperature.

For signal diodes the PIV rating is usually in the range

If the gate of JFET is reverse biased, the width of depletion region

Which of these has peak and valley points in v-i curve?

Which of the following can be operated with positive as well as negative gate voltage?

The resistivity of a semiconductor

For a photoengraving the mask used is

An inductor filter has a ripple that __________ with load resistance and consequently is used only with relatively __________ load currents.

An incremental model of a solid state device is one which represents the

The voltage at which Avalanche occurs is known as

If both emitter base and collector base junctions of a BJT are forward biased, the transistor is in