Inter-digitating of gate-cathode regions in SCR devices improves the

For low power SCRs (about 1 Ampere current) _____________ type of mounting is used

The total thermal resistance between junction and ambient θ_jA is 10°C/W. θ_jc is 2°C/W. θ_cs is 4°C/W. θ_sA = ?

The usual way to accomplish higher gate current for improved di/dt rating is by using

Heat dissipation from heat sink mainly takes place by

The sink to ambient thermal resistance of SCR θ_sA

In the ___________ type of mounting the SCR is pressed between two heat sinks

Which of the following thermal resistance parameters depends on the size of the device and the clamping pressure?

P_av x (θ_jc + θ_cs + θ_sA) =

The dv/dt rating of SCR can be improved by using