Insulated Gate Bipolar Junction Transistor (IGBTs) are normally classified into two types.
They are namely
(i) Non Punch Through IGBT [NPT-IGBT]
(ii) Punch Through [PT-IGBT].
The important facts about IGBT are summarized below ( If you are already familiar with IGBT basics, just skip this paragraph and proceed to next section)
What is meant by NPT-IGBT and PT-IGBT?
IGBTs having n+ buffer layer is called Punch Through-IGBT (PT-IGBT) and IGBTs made without this layer is known as Non Punch Through-IGBT (NPT-IGBT).
It is good to know about the structure of this device, for proper understanding of n+ buffer layer.
Why are they called as Symmetrical and Asymmetrical IGBTs?
A symmetrical IGBT (NPT-IGBT) is one having equal forward and reverse breakdown voltages. Such devices are used in AC applications.
In the asymmetrical IGBTs (PT-IGBT) structure, the reverse breakdown voltage is less than the forward breakdown voltage. These types of IGBTs are useful for DC circuits where the device is not required to support voltage in the reverse direction.
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